Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/123456789/31858
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dc.contributor.authorKhorol’skii, V. Y.-
dc.contributor.authorХорольский, В. Я.-
dc.contributor.authorIsupova, A. M.-
dc.contributor.authorИсупова, А. М.-
dc.date.accessioned2025-08-14T14:14:40Z-
dc.date.available2025-08-14T14:14:40Z-
dc.date.issued2025-
dc.identifier.citationKhorolsky, V. Y, Isupova, A. M., Yundin, K. M., Sharipov, I. K. Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads // Russian Electrical Engineering. - 2025. - 96 (5). - pp. 359 - 363. - DOI: 10.3103/S1068371225700464ru
dc.identifier.urihttps://dspace.ncfu.ru/handle/123456789/31858-
dc.description.abstractThe justification of a system for diagnosing the technical condition of power semiconductor devices, based on the principles of nondestructive testing has been reviewed. An assessment of the current state of protection means for semiconductor products is given. The theoretical foundations forming the basis for the development of such systems are presented, along with the results of experimental studies on a prototype device.ru
dc.language.isoenru
dc.publisherPleiades Publishingru
dc.relation.ispartofseriesRussian Electrical Engineering-
dc.subjectPower semiconductor devicesru
dc.subjectNondestructive examinationru
dc.subjectStatic and dynamic current overloadsru
dc.subjectElectronic equipment testingru
dc.subjectThermal stabilityru
dc.subjectCurrent overloadsru
dc.titleExperimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloadsru
dc.typeСтатьяru
vkr.instФакультет нефтегазовой инженерииru
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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