Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс:
https://dspace.ncfu.ru/handle/20.500.12258/11219Полная запись метаданных
| Поле DC | Значение | Язык |
|---|---|---|
| dc.contributor.author | Sankin, A. V. | - |
| dc.contributor.author | Санкин, А. В. | - |
| dc.contributor.author | Altukhov, V. I. | - |
| dc.contributor.author | Алтухов, В. И. | - |
| dc.contributor.author | Mitjugova, O. A. | - |
| dc.contributor.author | Митюгова, О. А. | - |
| dc.contributor.author | Yanukyan, E. G. | - |
| dc.contributor.author | Янукян, Э. Г. | - |
| dc.date.accessioned | 2020-01-30T09:27:58Z | - |
| dc.date.available | 2020-01-30T09:27:58Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Sankin, A., Altukhov, V., Mitjugova, O., Janukjan, E. Calculation and analysis of the features temperature behavior of the electrical conductivity semiconductors GeTe and SnTe near structural phase transition TC // Journal of Physics: Conference Series. - 2019. - Volume 1347. - Issue 1. - Номер статьи 012004 | ru |
| dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85077803660&origin=resultslist&sort=plf-f&src=s&st1=Calculation+and+analysis+of+the+features+temperature+behavior+of+the+electrical+conductivity+semiconductors+&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=123&s=TITLE-ABS-KEY%28Calculation+and+analysis+of+the+features+temperature+behavior+of+the+electrical+conductivity+semiconductors+%29&relpos=0&citeCnt=0&searchTerm= | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.12258/11219 | - |
| dc.description.abstract | In the article have conducted of the calculation for the temperature behavior of anomalous conductivity of ferroelectric-semiconductors type A4B6 (SnTe and GeTe) near the phase transitions of Tc. The proposed integrated (analytical) model is applicable both to describe temperature behavior of conductivity many-valleys semiconductors GeTe, and type systems the SnTe. Made investigation of the influence of structural phase transition on the conductivity of these systems. The results of the calculations are consistent with data of those experiments | ru |
| dc.language.iso | en | ru |
| dc.publisher | Institute of Physics Publishing | ru |
| dc.relation.ispartofseries | Journal of Physics: Conference Series | - |
| dc.subject | Technetium compounds | ru |
| dc.subject | Tin compounds | ru |
| dc.subject | Germanium compounds | ru |
| dc.subject | IV-VI semiconductors | ru |
| dc.subject | Narrow band gap semiconductors | ru |
| dc.subject | Semiconducting germanium compounds | ru |
| dc.subject | Semiconducting tin compounds | ru |
| dc.title | Calculation and analysis of the features temperature behavior of the electrical conductivity semiconductors GeTe and SnTe near structural phase transition TC | ru |
| dc.type | Статья | ru |
| vkr.inst | Институт сервиса, туризма и дизайна (филиал) СКФУ в г. Пятигорске | - |
| Располагается в коллекциях: | Статьи, проиндексированные в SCOPUS, WOS | |
Файлы этого ресурса:
| Файл | Размер | Формат | |
|---|---|---|---|
| scopusresults 1159 .pdf Доступ ограничен | 702.01 kB | Adobe PDF | Просмотреть/Открыть |
Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.