Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/14768
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dc.contributor.authorDevitsky, O. V.-
dc.contributor.authorДевицкий, О. В.-
dc.contributor.authorNikulin, D. A.-
dc.contributor.authorНикулин, Д. А.-
dc.contributor.authorSysoev, I. A.-
dc.contributor.authorСысоев, И. А.-
dc.date.accessioned2021-01-20T14:04:12Z-
dc.date.available2021-01-20T14:04:12Z-
dc.date.issued2020-
dc.identifier.citationDevitsky, O.V., Nikulin, D.A., Sysoev, I.A. Pulsed laser deposition of gallium nitride thin films on sapphire substrates // AIP Conference Proceedings. - 2020. - Volume 2313. - Номер статьи 030012ru
dc.identifier.urihttp://hdl.handle.net/20.500.12258/14768-
dc.description.abstractThe results of an experimental study of the surface morphology and structural properties of thin films of gallium nitride on sapphire obtained by pulsed laser deposition are presented. Pulse laser sputtering of gallium nitride films was carried out by sputtering a liquid gallium target in an atmosphere of nitrogen and argon. Using scanning electron microscopy and energy dispersive analysis, it was found that thin gallium nitride films obtained at a fluence of 0.75 J/cm2 have a composition close to stoichiometric. It was determined that a decrease in fluence during pulsed laser deposition of thin gallium nitride films on sapphire reduces the arithmetic average surface roughness to 0.891 nm. filmsru
dc.language.isoenru
dc.publisherAmerican Institute of Physics Inc.ru
dc.relation.ispartofseriesAIP Conference Proceedings-
dc.subjectPulsed laserru
dc.subjectGallium nitrideru
dc.subjectSapphire substratesru
dc.subjectFilms of gallium nitrideru
dc.titlePulsed laser deposition of gallium nitride thin films on sapphire substratesru
dc.typeСтатьяru
vkr.instИнженерный институтru
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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