Influence of argon pressure on the surface morphology of thin InGaAsP/Si films

Abstract

The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at different angles due to scattering, a developed relief is formed on the surface as a result of the shadow effect, and the coatings can become loose. The shadow effect is because the atoms incident at an angle to the surface cannot enter the zones lying outside the «line of sight», formed behind the already grown irregularities and elements of the coating relief. The morphology of such films is well described within the framework of the model, as well as the «mounded» surface.