Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/22295
Title: Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate
Authors: Devitsky, O. V.
Девицкий, О. В.
Zakharov, A. A.
Захаров, А. А.
Lunin, L. S.
Лунин, Л. С.
Sysoev, I. A.
Сысоев, И. А.
Pashchenko, A. S.
Пащенко, А. С.
Vakalov, D. S.
Вакалов, Д. С.
Chapura, O. M.
Чапура, О. М.
Keywords: Magnetron sputtering;A 3 B 5 compounds;Thin films;Surface morphology;Raman scattering
Issue Date: 2022
Citation: Devitsky, O.V., Zakharov, A.A., Lunin, L.S., Sysoev, I.A., Pashchenko, A.S., Vakalov, D.S., Chapura, O.M. Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate // Condensed Matter and Interphases. - 2022. - 24 (3), pp. 300-305. - DOI: 10.17308/kcmf.2022.24/9851
Series/Report no.: Condensed Matter and Interphases
Abstract: We present the results of the study of the structure and surface morphology of In x Ga1–x As thin films on a GaAs substrate. Thin films were obtained by magnetron sputtering from a specially formed In 0.45 Ga 0.55 As target in an argon atmosphere. The obtained samples of thin films were studied by Raman scattering, atomic force microscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. It was shown that the grains of the films obtained at a substrate temperature below 600°C were not faceted and were formed through the coalescence of grains with a size of 30–65 nm. At a substrate temperature of 600 °C, films consisted of submicron grains with a visible faceting. It was determined that the average grain size increased and the root-mean-square roughness of thin films decreased due to an increase in the substrate temperature. Thin films obtained at a substrate temperature of 600°C possessed the best structural properties.
URI: http://hdl.handle.net/20.500.12258/22295
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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