THE GROWTH OF INALN/ SI HETEROSTRUCTURES WITH A HIGH CONTENT OF IN

Abstract

InAlN films on Si (111) were obtained by the ion-beam deposition with various technological growth parameters. The results of the study of grown films by the scanning electron microscopy were used to identify the conditions for obtaining InAlN continuous films. Due to the mismatch of the lattice parameters of the film and substrate, the growth has an island character, a solid film was obtained only with the following technological parameters: the energy level of the beam U = 600 eV at the ion current of the beam ji = 32 mA, with the neutralization current of the beam jn = 32 mA, the substrate temperature of 400°C. With an increase of the nitrogen concentration to 80- 90% in the gas mixture, a transition from an island to an epitaxial growth mechanism took place. The ratio of the elements In, Al and N in the film showed that the active plasma of the ion beam breaks down weakly bound ions and leaves only normally embedded nitrogen atoms N-3, but excessively strong exposure leads to metallization of the films.