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DC Field | Value | Language |
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dc.contributor.author | Tarala, V. A. | - |
dc.contributor.author | Тарала, В. А. | - |
dc.contributor.author | Altakhov, A. S. | - |
dc.contributor.author | Алтахов, А. С. | - |
dc.contributor.author | Ambartsumov, M. G. | - |
dc.contributor.author | Амбарцумов, М. Г. | - |
dc.contributor.author | Martens, V. Y. | - |
dc.contributor.author | Мартенс, В. Я. | - |
dc.contributor.author | Shevchenko, M. Y. | - |
dc.contributor.author | Шевченко, М. Ю. | - |
dc.date.accessioned | 2018-09-21T09:24:31Z | - |
dc.date.available | 2018-09-21T09:24:31Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Tarala, V., Altakhov, A., Ambartsumov, M., Martens, V., Shevchenko, M. Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method // 2016 14th International Baltic Conference on Atomic Layer Deposition, BALD 2016 -Proceedings. - 2016. - Номер статьи 7886528. - Pages 29-30 | ru |
dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm= | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12258/3039 | - |
dc.description.abstract | Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rocking curve methods. It was found that synthesized films have refractive index of 2.03 plus-minus 0.03. XRD scans show reflections at 2 theta equal 35.7 degree (0002) and 75.9 degree (0004), characteristic to hexagonal AlN polytype. For the best specimen, full width at half maximum of (0002) rocking curve scan was close to 162 plus-minus 11 arcsec | ru |
dc.language.iso | en | ru |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | ru |
dc.relation.ispartofseries | 2016 14th International Baltic Conference on Atomic Layer Deposition, BALD 2016 - Proceedings | - |
dc.subject | Aluminum coatings | ru |
dc.subject | Atomic layer deposition | ru |
dc.subject | Epitaxial growth | ru |
dc.subject | Refractive index | ru |
dc.subject | Oxide films | ru |
dc.subject | Aluminum nitride | ru |
dc.title | Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method | ru |
dc.type | Статья | ru |
vkr.amount | Pages 29-30 | ru |
vkr.inst | Инженерный институт | - |
Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
Files in This Item:
File | Description | Size | Format | |
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scopusresults 329 .pdf Restricted Access | 62.46 kB | Adobe PDF | View/Open | |
WoS 159 .pdf Restricted Access | 105.46 kB | Adobe PDF | View/Open |
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