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Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/3039
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dc.contributor.authorTarala, V. A.-
dc.contributor.authorТарала, В. А.-
dc.contributor.authorAltakhov, A. S.-
dc.contributor.authorАлтахов, А. С.-
dc.contributor.authorAmbartsumov, M. G.-
dc.contributor.authorАмбарцумов, М. Г.-
dc.contributor.authorMartens, V. Y.-
dc.contributor.authorМартенс, В. Я.-
dc.contributor.authorShevchenko, M. Y.-
dc.contributor.authorШевченко, М. Ю.-
dc.date.accessioned2018-09-21T09:24:31Z-
dc.date.available2018-09-21T09:24:31Z-
dc.date.issued2016-
dc.identifier.citationTarala, V., Altakhov, A., Ambartsumov, M., Martens, V., Shevchenko, M. Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method // 2016 14th International Baltic Conference on Atomic Layer Deposition, BALD 2016 -Proceedings. - 2016. - Номер статьи 7886528. - Pages 29-30ru
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm=-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/3039-
dc.description.abstractResearch was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rocking curve methods. It was found that synthesized films have refractive index of 2.03 plus-minus 0.03. XRD scans show reflections at 2 theta equal 35.7 degree (0002) and 75.9 degree (0004), characteristic to hexagonal AlN polytype. For the best specimen, full width at half maximum of (0002) rocking curve scan was close to 162 plus-minus 11 arcsecru
dc.language.isoenru
dc.publisherInstitute of Electrical and Electronics Engineers Inc.ru
dc.relation.ispartofseries2016 14th International Baltic Conference on Atomic Layer Deposition, BALD 2016 - Proceedings-
dc.subjectAluminum coatingsru
dc.subjectAtomic layer depositionru
dc.subjectEpitaxial growthru
dc.subjectRefractive indexru
dc.subjectOxide filmsru
dc.subjectAluminum nitrideru
dc.titleGrowth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD methodru
dc.typeСтатьяru
vkr.amountPages 29-30ru
vkr.instИнженерный институт-
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