Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/3069
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dc.contributor.authorDevitsky, O. V.-
dc.contributor.authorДевицкий, О. В.-
dc.contributor.authorSysoev, I. A.-
dc.contributor.authorСысоев, И. А.-
dc.date.accessioned2018-09-25T13:54:55Z-
dc.date.available2018-09-25T13:54:55Z-
dc.date.issued2017-
dc.identifier.citationLunin, L.S., Lunina, M.L., Devitsky, O.V., Sysoev, I.A. Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters // Semiconductors. - 2017. - Volume 51. - Issue 3. - Pages 387-391ru
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85015698172&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=a20179987da189f242377a00100f366c&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Pulsed+laser+deposition+of%29&relpos=0&citeCnt=0&searchTerm=-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/3069-
dc.description.abstractPulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman spectroscopy. The application of Al0.3Ga0.7As and GaP films as wide-gap windows of silicon photoelectric converters is examined. The spectral characteristics of photocells based on Al0.3Ga0.7As/Si and GaP/Si heterostructures are studied. The heterostructures can be used as the first p–n junction of a Si-based multijunction photoelectric converterru
dc.language.isoenru
dc.publisherMaik Nauka-Interperiodica Publishingru
dc.relation.ispartofseriesSemiconductors-
dc.subjectPulsed laserru
dc.subjectPhotoelectric convertersru
dc.titlePulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric convertersru
dc.typeСтатьяru
vkr.amountPages 387-391ru
vkr.instИнженерный институт-
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