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DC Field | Value | Language |
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dc.contributor.author | Devitsky, O. V. | - |
dc.contributor.author | Девицкий, О. В. | - |
dc.contributor.author | Sysoev, I. A. | - |
dc.contributor.author | Сысоев, И. А. | - |
dc.date.accessioned | 2018-09-25T13:54:55Z | - |
dc.date.available | 2018-09-25T13:54:55Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Lunin, L.S., Lunina, M.L., Devitsky, O.V., Sysoev, I.A. Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters // Semiconductors. - 2017. - Volume 51. - Issue 3. - Pages 387-391 | ru |
dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85015698172&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=a20179987da189f242377a00100f366c&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Pulsed+laser+deposition+of%29&relpos=0&citeCnt=0&searchTerm= | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12258/3069 | - |
dc.description.abstract | Pulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman spectroscopy. The application of Al0.3Ga0.7As and GaP films as wide-gap windows of silicon photoelectric converters is examined. The spectral characteristics of photocells based on Al0.3Ga0.7As/Si and GaP/Si heterostructures are studied. The heterostructures can be used as the first p–n junction of a Si-based multijunction photoelectric converter | ru |
dc.language.iso | en | ru |
dc.publisher | Maik Nauka-Interperiodica Publishing | ru |
dc.relation.ispartofseries | Semiconductors | - |
dc.subject | Pulsed laser | ru |
dc.subject | Photoelectric converters | ru |
dc.title | Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters | ru |
dc.type | Статья | ru |
vkr.amount | Pages 387-391 | ru |
vkr.inst | Инженерный институт | - |
Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
Files in This Item:
File | Description | Size | Format | |
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scopusresults 356 .pdf Restricted Access | 62.42 kB | Adobe PDF | View/Open | |
WoS 179 .pdf Restricted Access | 455.92 kB | Adobe PDF | View/Open |
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