Please use this identifier to cite or link to this item:
Title: Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
Authors: Tarala, V. A.
Тарала, В. А.
Ambartsumov, M. G.
Амбарцумов, М. Г.
Altakhov, A. S.
Алтахов, А. С.
Martens, V. Y.
Мартенс, В. Я.
Shevchenko, M. Y.
Шевченко, М. Ю.
Keywords: A1. X-ray diffraction;A3. Atomic layer epitaxy;B1. Nitrides;B2. Semiconducting aluminum compounds;B2. Semiconducting III-V materials;Aluminum nitride;Aluminum coatings;Atoms
Issue Date: 2016
Publisher: Elsevier B.V.
Citation: Tarala, V., Ambartsumov, M., Altakhov, A., Martens, V., Shevchenko, M. Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures // Journal of Crystal Growth. - 2016. - Volume 455. - Pages 157-160
Series/Report no.: Journal of Crystal Growth
Abstract: The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It has been shown that, ceteris paribus, AlN films grown on sapphire substrates have higher crystallinity than the samples grown on silicon wafers. With duration of plasma exposure of more than 20 s and at a temperature of 300 °C synthesized heteroepitaxial film had refractive index equal to 2.03±0.03. The X-ray diffraction scans feature (002) and (004) reflections at 2Θ equal to 35.7° and 75.9°, which are characteristic of hexagonal polytype of AlN. For the best sample, (002) reflection had full width on the half maximum of 162±11″
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

Files in This Item:
File Description SizeFormat 
scopusresults 400 .pdf
  Restricted Access
63.17 kBAdobe PDFView/Open
WoS 243 .pdf
  Restricted Access
104.04 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.