Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/3178
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dc.contributor.authorTarala, V. A.-
dc.contributor.authorТарала, В. А.-
dc.date.accessioned2018-10-10T09:48:09Z-
dc.date.available2018-10-10T09:48:09Z-
dc.date.issued2016-
dc.identifier.citationBochkareva, N.I., Ivanov, A.M., Klochkov, A.V., Tarala, V.A., Shreter, Y.G. The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells // Technical Physics Letters. - 2016. - Volume 42. - Issue 11. - Pages 1099-1102ru
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85000501113&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=16&citeCnt=1&searchTerm=-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/3178-
dc.description.abstractIt is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiencyru
dc.language.isoenru
dc.publisherMaik Nauka-Interperiodica Publishingru
dc.relation.ispartofseriesTechnical Physics Letters-
dc.subjectQuantum wellsru
dc.subjectPoint defectsru
dc.subjectJoule heatingru
dc.titleThe effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wellsru
dc.typeСтатьяru
vkr.amountPages 1099-1102ru
vkr.instИнженерный институт-
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