1. Репозиторий научных публикаций СКФУ
  2. Публикации сотрудников СКФУ
  3. Статьи, проиндексированные в SCOPUS, WOS
Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/3404
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAltukhov, V. I.-
dc.contributor.authorАлтухов, В. И.-
dc.contributor.authorKasyanenko, I. S.-
dc.contributor.authorКасьяненко, И. С.-
dc.contributor.authorSankin, A. V.-
dc.contributor.authorСанкин, А. В.-
dc.date.accessioned2018-11-13T14:27:20Z-
dc.date.available2018-11-13T14:27:20Z-
dc.date.issued2016-
dc.identifier.citationAltuhov, V.I., Kasyanenko, I.S., Sankin, A.V., Bilalov, B.A., Sigov, A.S. Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide // Semiconductors. - 2016. - Volume 50. - Issue 9. - Pages 1168-1172ru
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm=-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/3404-
dc.description.abstractA simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x(AlN)x structures. The results of calculations are compared to experimental dataru
dc.language.isoenru
dc.publisherMaik Nauka-Interperiodica Publishingru
dc.relation.ispartofseriesSemiconductors-
dc.subjectSchottky barrierru
dc.subjectMetal–alloyru
dc.subjectCurrent voltage characteristicsru
dc.subjectSilicon carbideru
dc.titleCalculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbideru
dc.typeСтатьяru
vkr.amountPages 1168-1172ru
vkr.instИнститут сервиса, туризма и дизайна (филиал) СКФУ в г. Пятигорске-
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

Files in This Item:
File Description SizeFormat 
scopusresults 570 .pdf
  Restricted Access		62.75 kBAdobe PDFView/Open
WoS 331 .pdf
  Restricted Access		307.07 kBAdobe PDFView/Open
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.