Please use this identifier to cite or link to this item:
Title: Features wetting and anisotropy of interfacial energy in a metal particle-silicon system
Authors: Blinov, A. V.
Блинов, А. В.
Kravtsov, A. A.
Кравцов, А. А.
Serov, A. V.
Серов, А. В.
Keywords: Adhesion;Anisotropy;Contact angle;Interfacial energy;Particles (particulate matter);Silicon;Wetting;Substrates
Issue Date: 2018
Publisher: EDP Sciences
Citation: Aref'Eva, L.P., Blinov, A.V., Kravtsov, A.A., Shebzukhova, I.G., Serov, A.V. Features wetting and anisotropy of interfacial energy in a metal particle-silicon system // MATEC Web of Conferences. - 2018. - Volume 226. -Номер статьи 03009
Series/Report no.: MATEC Web of Conferences
Abstract: In this paper, we propose a technique for estimating the wetting and anisotropy of the interfacial energy at the interface stabilized by organic compounds of metal particles (cobalt, copper) and semiconductor substrate based on the construction of the Winterbottom equilibrium shape of the crystal. The effective contact angle and the ratio of interphase energies at the particle-substrate interface are calculated from the experimental data of the geometric characteristics of the particles obtained by analyzing the AFM images of the samples. The accuracy of the evaluation of the effective contact angle for all systems is not less than 0.5 °. It was found that the phenomenon of incomplete wetting is observed in the systems under study. The work of adhesion in the systems under consideration is evaluated. With an increase in the effective contact angle, the ratio of the area of contact to V2/3 (V-volume of the particle) in different directions and the work of adhesion is nonlinear. The obtained dependences are qualitatively consistent with thermodynamic states and known data for other systems
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

Files in This Item:
File Description SizeFormat 
scopusresults 629 .pdf
  Restricted Access
148.89 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.