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Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/3693
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dc.contributor.authorSokolenko, E. V.-
dc.contributor.authorСоколенко, Е. В.-
dc.date.accessioned2018-12-17T11:04:41Z-
dc.date.available2018-12-17T11:04:41Z-
dc.date.issued2015-
dc.identifier.citationSokolenko, E.V. Modeling of the influence of defects on the electronic structure of silicon nanoclusters // Inorganic Materials. - 2015. - Volume 51. - Issue 9. - Номер статьи 665. - Pages 862-869ru
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-84938559290&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=12&citeCnt=0&searchTerm=-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/3693-
dc.description.abstractAbstract The total and partial electron densities of states of defect-free and imperfect silicon clusters have been calculated by a semiempirical method. The local centers produced in the band gap of silicon by doping have been shown to be determined predominantly by the intrinsic states of siliconru
dc.language.isoenru
dc.publisherMaik Nauka Publishing / Springer SBMru
dc.relation.ispartofseriesInorganic Materials-
dc.subjectDefectsru
dc.subjectElectronic structureru
dc.subjectEnergy gapru
dc.subjectSiliconru
dc.titleModeling of the influence of defects on the electronic structure of silicon nanoclustersru
dc.typeСтатьяru
vkr.amountPages 862-869ru
vkr.instИнститут нефти и газа-
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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