Investigation of GexSi1 –x/Si nanoheterostructures grown by ion-beam deposition

Abstract

GexSi1 – x/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger electron spectroscopy methods. The germanium content is shown to affect the structural perfection and surface morphology of the GexS1 – x/Si layer. Finally, GexSi1 – x/Si nanoheterostructures are established to serve as cheap synthetic substrates for high efficiency cascade solar cells based on III—V compounds