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|Title:||Extreme environment wideband, high-efficiency photovoltaics based on new physical principles and hyperfast LPE GaAs power electronics|
|Authors:||Saytiev, A. B.|
Саутиев, А. Б.
Sysoev, I. A.
Сысоев, И. А.
|Keywords:||GaAs diodes;GaAs structures;Gallium arsenide (GaAs) solar cells;GHz power electronics;LPE technology;Power semiconductor devices|
|Publisher:||Institute of Electrical and Electronics Engineers Inc.|
|Citation:||Voitovich, V.E., Gordeev, A.I., Saytiev, A.B., Sysoev, I.A. Extreme environment wideband, high-efficiency photovoltaics based on new physical principles and hyperfast LPE GaAs power electronics // 2019 International Seminar on Electron Devices Design and Production, SED 2019 - Proceedings. - 2019. - Article number 8798418|
|Series/Report no.:||2019 International Seminar on Electron Devices Design and Production, SED 2019 - Proceedings|
|Abstract:||The paper examines the issues of solar cells designs based on new LPE GaAs epitaxial structures for high-efficiency reception and conversion of solar energy in the wavelength band λ = 0,2 ÷ 4,0 μm, which allows to use them both under extreme climatic conditions of Sahara desert and in Baltic Sea region.The paper shows future promising power devices for DC/AC conversion of solar energy to single-phase and three-phase power at frequencies 2 ÷ 10 MHz and with maximum ambient/case operating temperature up to 250°C.The paper addresses challenges and opportunities for development of new-generation high-performance LPE GaAs photodetectors on the basis of the new physical principles:-effect of GaAs energy band gap splitting by amphoteric hydrogen-like centers on silicon (Si) atoms;-phenomenon of efficiency increase in photodetectors based on quantum dot magnetic centers|
|Appears in Collections:||Статьи, проиндексированные в SCOPUS, WOS|
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