Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers

Abstract

The study proposes promising Schottky barriers for solar cells based on Au-π-CuInSe2 and Au-π-Tl1-xCuxInSe2 (X=1.0; 0.985) following the experimental study of volt-ampere, capacitance-voltage characteristics (VAC, CVC), as well as the spectral distribution of photoelectromotive force (photo-emf) and quantum efficiency. It was found that the substitution of thallium atoms with copper atoms makes it possible to control both the contact potential difference and the spectral interval of the maximum quantum output of Schottky barriers based on Au-π-Tl1-xCuxInSe2.