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dc.contributor.authorDevitsky, O. V.-
dc.contributor.authorДевицкий, О. В.-
dc.contributor.authorSysoev, I. A.-
dc.contributor.authorСысоев, И. А.-
dc.contributor.authorKas'yanov, I. V.-
dc.contributor.authorКасьянов, И. В.-
dc.contributor.authorNikulin, D. A.-
dc.contributor.authorНикулин, Д. А.-
dc.identifier.citationLunin, LS; Devitskii, OV; Sysoev, IA; Pashchenko, AS; Kas'yanov, IV; Nikulin, DA; Irkha, VA. Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate // TECHNICAL PHYSICS LETTERS. - 2019. - Том: 45. - Выпуск: 12. - Стр.: 1237-1240ru
dc.description.abstractThin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphireru
dc.relation.ispartofseriesTechnical Physics Letters-
dc.subjectIon-beam depositionru
dc.subjectGallium nitrideru
dc.subjectAluminum nitrideru
dc.subjectWide-bandgap semiconductorsru
dc.titleIon-beam deposition of thin AlN films on Al2O3 substrateru
vkr.amountСтр.: 1237-1240ru
vkr.instИнженерный институтru
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