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Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/14301
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dc.contributor.authorAltukhov, V. I.-
dc.contributor.authorАлтухов, В. И.-
dc.contributor.authorSysoev, D. K.-
dc.contributor.authorСысоев, Д. К.-
dc.date.accessioned2020-10-07T13:55:14Z-
dc.date.available2020-10-07T13:55:14Z-
dc.date.issued2020-
dc.identifier.citationDadashev, R.H., Altukhov, V.I., Sankin, A.V., Sysoev, D.K., Elimkhanov, D.Z., Gudaev, M.-A.A., Uspazhiev, R.T. Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes // IOP Conference Series: Materials Science and Engineering. - 2020. - Volume 905. - Issue 1. - Номер статьи 012017ru
dc.identifier.urihttp://hdl.handle.net/20.500.12258/14301-
dc.description.abstractThe main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been developed, and the current-voltage characteristics of Schottky diodes have been obtained, their comparison with the I-V characteristics of silicon-based diodes has been maderu
dc.language.isoenru
dc.publisherIOP Publishing Ltdru
dc.relation.ispartofseriesIOP Conference Series: Materials Science and Engineering-
dc.subjectSchottky diodesru
dc.subjectObtaining single crystalsru
dc.subjectSolid solutionsru
dc.subjectSingle crystals of SiCru
dc.titleObtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodesru
dc.typeСтатьяru
vkr.instИнститут сервиса, туризма и дизайна (филиал) СКФУ в г. Пятигорскеru
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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