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https://dspace.ncfu.ru/handle/20.500.12258/15488
Title: | Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDs |
Authors: | Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И. |
Keywords: | Photo-, cathodic- and electroluminescence-band models |
Issue Date: | 2021 |
Publisher: | IOP Publishing Ltd |
Citation: | Dadashev, R.K., Sankin, A.V., Altukhov, V.I., Safaraliev, G.K., Elimkhanov, D.Z., Antonov, V.F. Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDs // IOP Conference Series: Materials Science and Engineering. - 2021. - Volume 1064. - Issue 1. - Номер статьи 012009 |
Series/Report no.: | IOP Conference Series: Materials Science and Engineering |
Abstract: | The paper presents models of bands (levels) in solid (SiC)1-x(AlN)x luminescence centers and n-SiC/p-(SiC)1-x(AlN)x heterostructures (light-emitting diodes). The diagram of (SiC)1-x(AlN)x energy gaps shows the positions of luminescence levels, subject to x. A SiC/SiC-AlN series of electroluminescence bands, for the first time, is found to have a continuous relationship between the positions of short-wave and long-wave band maxima in a K-minimum conduction band, respectively, as continuous functions of contact current density |
URI: | http://hdl.handle.net/20.500.12258/15488 |
Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
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