Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/15488
Title: Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDs
Authors: Sankin, A. V.
Санкин, А. В.
Altukhov, V. I.
Алтухов, В. И.
Keywords: Photo-, cathodic- and electroluminescence-band models
Issue Date: 2021
Publisher: IOP Publishing Ltd
Citation: Dadashev, R.K., Sankin, A.V., Altukhov, V.I., Safaraliev, G.K., Elimkhanov, D.Z., Antonov, V.F. Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDs // IOP Conference Series: Materials Science and Engineering. - 2021. - Volume 1064. - Issue 1. - Номер статьи 012009
Series/Report no.: IOP Conference Series: Materials Science and Engineering
Abstract: The paper presents models of bands (levels) in solid (SiC)1-x(AlN)x luminescence centers and n-SiC/p-(SiC)1-x(AlN)x heterostructures (light-emitting diodes). The diagram of (SiC)1-x(AlN)x energy gaps shows the positions of luminescence levels, subject to x. A SiC/SiC-AlN series of electroluminescence bands, for the first time, is found to have a continuous relationship between the positions of short-wave and long-wave band maxima in a K-minimum conduction band, respectively, as continuous functions of contact current density
URI: http://hdl.handle.net/20.500.12258/15488
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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