Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/19592
Title: PLD growth of InGaAsP nanowires: morphology surface and structural property
Authors: Sysoev, I. A.
Сысоев, И. А.
Kononov, Y. G.
Кононов, Ю. Г.
Zakharov, A. A.
Захаров, А. А.
Mitrofanov, D. V.
Митрофанов, Д. В.
Keywords: AFM;Raman spectroscopy;III - V compounds;Nanowires;Pulsed laser deposition
Issue Date: 2022
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Devitsky, O. V., Nikulin, D. A., Sysoev, I. A., Kononov, Y. G., Zakharov, A. A., Mitrofanov, D. V. PLD Growth of InGaAsP Nanowires: Morphology Surface and Structural Property // Proceedings of the 2022 Conference of Russian Young Researchers in Electrical and Electronic Engineering, ElConRus 2022. - 2022. - Стр.: 946 - 949. - DOI10.1109/ElConRus54750.2022.9755698
Series/Report no.: Proceedings of the 2022 Conference of Russian Young Researchers in Electrical and Electronic Engineering, ElConRus 2022
Abstract: Nanowires of III - V solid solutions hold promise for use in optoelectronics and photovoltaics, for example, as functional coatings for solar cells. InGaAsP nanowires were grown on GaAs and Si substrates by pulsed laser deposition. The dependences of the orientation of nanowires on the substrate temperature are determined. It was determined by the methods of scanning electron microscopy and energy dispersive analysis that the nanowires have a hexagonal cut. Nanowires grown on a Si substrate are oriented vertically, while some nanowires grown on a GaAs substrate are tilted up to 45° both to the right and to the left. The Raman spectra of InGaAsP nanowires are studied. It was determined by atomic force microscopy that the root mean square roughness of the nanowire sample surface is 4.68 nm. It was found that InGaAsP nanowires grow most likely by the vapor-liquid-solid mechanism.
URI: http://hdl.handle.net/20.500.12258/19592
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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