PLD growth of InGaAsP nanowires: morphology surface and structural property

Abstract

Nanowires of III - V solid solutions hold promise for use in optoelectronics and photovoltaics, for example, as functional coatings for solar cells. InGaAsP nanowires were grown on GaAs and Si substrates by pulsed laser deposition. The dependences of the orientation of nanowires on the substrate temperature are determined. It was determined by the methods of scanning electron microscopy and energy dispersive analysis that the nanowires have a hexagonal cut. Nanowires grown on a Si substrate are oriented vertically, while some nanowires grown on a GaAs substrate are tilted up to 45° both to the right and to the left. The Raman spectra of InGaAsP nanowires are studied. It was determined by atomic force microscopy that the root mean square roughness of the nanowire sample surface is 4.68 nm. It was found that InGaAsP nanowires grow most likely by the vapor-liquid-solid mechanism.