Influence of indium concentration on the structure and surface morphology of InGaAs films obtained by liquid-phase epitaxy

Abstract

InxGa1-xAs layers with different indium contents on a GaAs substrate were grown by liquid-phase epitaxy in a temperature gradient field. The peculiarities of the influence of the indium concentration in InxGa1-xAs on the structure of thin films have been studied by the method of Raman light scattering. It has been determined that an increase in the indium content in the InxGa1-xAs solid solution leads to a strong increase in the root-mean-square roughness of the layer surface. It is shown that with an increase in the indium concentration, the shift LO- of the GaAs phonon mode increases. The dependence of the full width at half maximum LO- of the GaAs phonon mode on the indium concentration and the value of the temperature gradient is determined. The conditions for obtaining InxGa1-xAs layers on a GaAs substrate with the highest crystal perfection have been determined.