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Title: Pulsed magnetron sputtering and ion-induced annealing of carbon films
Authors: Shevchenko, E. F.
Шевченко, Е. Ф.
Sysoev, I. A.
Сысоев, И. А.
Keywords: AFM;Beam lithography;Carbon film;Film deposition;Ion annealing;Magnetron sputtering;Raman spectra;Surface resistance
Issue Date: 2017
Publisher: Maik Nauka-Interperiodica Publishing
Citation: Shevchenko, E.F., Sysoev, I.A., Prucnal, S., Frenzel, K. Pulsed magnetron sputtering and ion-induced annealing of carbon films // Journal of Surface Investigation. - 2017. - Volume 11. - Issue 2. - Pages 305-314
Series/Report no.: Journal of Surface Investigation
Abstract: Thin carbon films are deposited on a silicon substrate at room temperatures via the biased pulsed magnetron sputtering of graphite in the physical (Ar, Kr, Xe) and reactive (Ar: CH4) modes at a different sputtering power density varying from 40 to 550 W/cm2. To ensure ion-assistance, negative bias of the substrate is set during film deposition by means of both DC and pulsed power sources. Some deposition parameters lead to a high hardness of the films (12.5 GPa), optical transparency, a surface resistance of RS > 109 Ω/h, and developed nanomorphology of the sample surface which bears visible inclusions with a lateral size of 35 nm. Some of the films are annealed after deposition with a C+-ion beam with an energy of 20 keV. A correlation between the parameters of magnetron deposition and ion-beam modification and the examined characteristics of the films is found. Different RS values in a wide range can be achieved by means of simple adjustment of the parameters and modes during magnetron sputtering and ion-beam modification
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