Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/3072
Title: Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
Authors: Tarala, V. A.
Тарала, В. А.
Altakhov, A. S.
Алтахов, А. С.
Ambartsumov, M. G.
Амбарцумов, М. Г.
Martens, V. Y.
Мартенс, В. Я.
Keywords: Atomic layer deposition;Sapphire substrates
Issue Date: 2017
Publisher: Maik Nauka-Interperiodica Publishing
Citation: Tarala, V.A., Altakhov, A.S., Ambartsumov, M.G., Martens, V.Y. Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition // Technical Physics Letters. - 2017. - Volume 43. - Issue 1. - Pages 74-77
Series/Report no.: Technical Physics Letters
Abstract: The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-85013339740&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=08dccdde8616d2d2d58999ab85e59422&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Growing+oriented+AlN+films+on+sapphire+substrates+by+plasma-enhanced+atomic+layer+deposition%29&relpos=0&citeCnt=2&searchTerm=
http://hdl.handle.net/20.500.12258/3072
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