Репозиторий научных и учебно-методических публикаций
Северо-Кавказский федеральный университет
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https://dspace.ncfu.ru/handle/20.500.12258/3467| Title: | Modeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x) |
| Authors: | Altukhov, V. I. Алтухов, В. И. Bilalov, B. A. Билалов, Б. А. Sankin, A. V. Санкин, А. В. Filipova, S. V. Филипова, С. В. |
| Keywords: | Schottky barrier;Metal-semiconductor transitions;Silicon carbide;Solid solutions;Volt-amper characteristics |
| Issue Date: | 2016 |
| Publisher: | Sumy State University |
| Citation: | Altukhov, VI; Bilalov, BA; Sankin, AV; Filipova, SV. Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SiC)(1) (-) (x)(AlN)(x) // JOURNAL OF NANO- AND ELECTRONIC PHYSICS. - 2016. - Том: 8. - Выпуск: 4. - Номер статьи: 04003 |
| Series/Report no.: | Journal of Nano- and Electronic Physics |
| Abstract: | Proposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with experiment |
| URI: | http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=27&SID=E57V5HcvS1OIs9XhLID&page=1&doc=1 http://hdl.handle.net/20.500.12258/3467 |
| Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| WoS 357 .pdf Restricted Access | 463.1 kB | Adobe PDF | View/Open | |
| scopusresults 1339 .pdf Restricted Access | 64.36 kB | Adobe PDF | View/Open |
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