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Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/3467
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dc.contributor.authorAltukhov, V. I.-
dc.contributor.authorАлтухов, В. И.-
dc.contributor.authorBilalov, B. A.-
dc.contributor.authorБилалов, Б. А.-
dc.contributor.authorSankin, A. V.-
dc.contributor.authorСанкин, А. В.-
dc.contributor.authorFilipova, S. V.-
dc.contributor.authorФилипова, С. В.-
dc.date.accessioned2018-11-21T12:26:34Z-
dc.date.available2018-11-21T12:26:34Z-
dc.date.issued2016-
dc.identifier.citationAltukhov, VI; Bilalov, BA; Sankin, AV; Filipova, SV. Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SiC)(1) (-) (x)(AlN)(x) // JOURNAL OF NANO- AND ELECTRONIC PHYSICS. - 2016. - Том: 8. - Выпуск: 4. - Номер статьи: 04003ru
dc.identifier.urihttp://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=27&SID=E57V5HcvS1OIs9XhLID&page=1&doc=1-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/3467-
dc.description.abstractProposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with experimentru
dc.language.isoenru
dc.publisherSumy State Universityru
dc.relation.ispartofseriesJournal of Nano- and Electronic Physics-
dc.subjectSchottky barrierru
dc.subjectMetal-semiconductor transitionsru
dc.subjectSilicon carbideru
dc.subjectSolid solutionsru
dc.subjectVolt-amper characteristicsru
dc.titleModeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x)ru
dc.typeСтатьяru
vkr.instИнститут математики и естественных наук-
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