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Title: Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
Authors: Tarala, V. A.
Тарала, В. А.
Altakhov, A. S.
Алтахов, А. С.
Martens, V. Y.
Мартенс, В. Я.
Lisitsyn, S. V.
Лисицын, С. В.
Keywords: Aluminum;Aluminum coatings;Aluminum nitride;Atomic layer deposition;Crystalline materials;Deposition;Electric discharges;Gas discharge tubes;Nitrides;Plasma theory;Film growth
Issue Date: 2015
Publisher: Institute of Physics Publishing
Citation: Tarala, V.A., Altakhov, A.S., Martens, V.Y., Lisitsyn, S.V. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures // Journal of Physics: Conference Series. - 2015. - Volume 652. - Issue 1. - Номер статьи 012034
Series/Report no.: Journal of Physics: Conference Series
Abstract: Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250°C and 280°C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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