Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/3686
Title: Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
Authors: Tarala, V. A.
Тарала, В. А.
Altakhov, A. S.
Алтахов, А. С.
Martens, V. Y.
Мартенс, В. Я.
Lisitsyn, S. V.
Лисицын, С. В.
Keywords: Aluminum;Aluminum coatings;Aluminum nitride;Atomic layer deposition;Crystalline materials;Deposition;Electric discharges;Gas discharge tubes;Nitrides;Plasma theory;Film growth
Issue Date: 2015
Publisher: Institute of Physics Publishing
Citation: Tarala, V.A., Altakhov, A.S., Martens, V.Y., Lisitsyn, S.V. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures // Journal of Physics: Conference Series. - 2015. - Volume 652. - Issue 1. - Номер статьи 012034
Series/Report no.: Journal of Physics: Conference Series
Abstract: Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250°C and 280°C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-84957824585&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=5&citeCnt=1&searchTerm=
http://hdl.handle.net/20.500.12258/3686
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