Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution

Abstract

A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy EF on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x(AlN)x structures. The theoretical results have been compared with the experimental data