Репозиторий научных и учебно-методических публикаций
ФГАОУ ВО «Северо-Кавказский федеральный университет»
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https://dspace.ncfu.ru/handle/20.500.12258/3693| Title: | Modeling of the influence of defects on the electronic structure of silicon nanoclusters |
| Authors: | Sokolenko, E. V. Соколенко, Е. В. |
| Keywords: | Defects;Electronic structure;Energy gap;Silicon |
| Issue Date: | 2015 |
| Publisher: | Maik Nauka Publishing / Springer SBM |
| Citation: | Sokolenko, E.V. Modeling of the influence of defects on the electronic structure of silicon nanoclusters // Inorganic Materials. - 2015. - Volume 51. - Issue 9. - Номер статьи 665. - Pages 862-869 |
| Series/Report no.: | Inorganic Materials |
| Abstract: | Abstract The total and partial electron densities of states of defect-free and imperfect silicon clusters have been calculated by a semiempirical method. The local centers produced in the band gap of silicon by doping have been shown to be determined predominantly by the intrinsic states of silicon |
| URI: | https://www.scopus.com/record/display.uri?eid=2-s2.0-84938559290&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=12&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/3693 |
| Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| scopusresults 659 .pdf Restricted Access | 62.49 kB | Adobe PDF | View/Open | |
| WoS 430 .pdf Restricted Access | 1.09 MB | Adobe PDF | View/Open |
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