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Title: Investigation of GexSi1 –x/Si nanoheterostructures grown by ion-beam deposition
Authors: Sysoev, I. A.
Сысоев, И. А.
Keywords: Ion-beam deposition;Nanoheterostructures;Raman spectroscopy;X-ray diffraction;Si-Ge alloys;Spectroscopic analysis
Issue Date: 2019
Publisher: Pleiades Publishing
Citation: Alfimova, D.L., Lunin, L.S., Lunina, M.L., Sysoev, I.A., Pashchenko, A.S., Danilina, E.M. Investigation of GexSi1 –x/Si Nanoheterostructures Grown by Ion-Beam Deposition // Journal of Surface Investigation. - 2019. - Volume 13. - Issue 3. - Pages 493-498
Series/Report no.: Journal of Surface Investigation
Abstract: GexSi1 – x/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger electron spectroscopy methods. The germanium content is shown to affect the structural perfection and surface morphology of the GexS1 – x/Si layer. Finally, GexSi1 – x/Si nanoheterostructures are established to serve as cheap synthetic substrates for high efficiency cascade solar cells based on III—V compounds
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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