Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/5975
Title: Investigation of GexSi1 –x/Si Nanoheterostructures Grown by Ion-Beam Deposition
Authors: Sysoev, I. A.
Сысоев, И. А.
Keywords: Ion-beam deposition;Nanoheterostructures;Raman spectroscopy;X-ray diffraction;Si-Ge alloys;Spectroscopic analysis
Issue Date: 2019
Publisher: Pleiades Publishing
Citation: Alfimova, D.L., Lunin, L.S., Lunina, M.L., Sysoev, I.A., Pashchenko, A.S., Danilina, E.M. Investigation of GexSi1 –x/Si Nanoheterostructures Grown by Ion-Beam Deposition // Journal of Surface Investigation. - 2019. - Volume 13. - Issue 3. - Pages 493-498
Series/Report no.: Journal of Surface Investigation
Abstract: GexSi1 – x/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger electron spectroscopy methods. The germanium content is shown to affect the structural perfection and surface morphology of the GexS1 – x/Si layer. Finally, GexSi1 – x/Si nanoheterostructures are established to serve as cheap synthetic substrates for high efficiency cascade solar cells based on III—V compounds
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-85067959397&origin=resultslist&sort=plf-f&src=s&st1=Investigation+of+GexSi1+--x%2fSi+Nanoheterostructures+Grown+by+Ion-Beam+Deposition&st2=&sid=6e4a3f0a57961460ec602538180ac367&sot=b&sdt=b&sl=95&s=TITLE-ABS-KEY%28Investigation+of+GexSi1+--x%2fSi+Nanoheterostructures+Grown+by+Ion-Beam+Deposition%29&relpos=0&citeCnt=0&searchTerm=
http://hdl.handle.net/20.500.12258/5975
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