Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates

Sysoev, I. A.; Сысоев, И. А.; Gusev, D. A.; Гусев, Д. А.

Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/6920

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DC Field	Value	Language
dc.contributor.author	Sysoev, I. A.	-
dc.contributor.author	Сысоев, И. А.	-
dc.contributor.author	Gusev, D. A.	-
dc.contributor.author	Гусев, Д. А.	-
dc.date.accessioned	2019-09-04T09:03:30Z	-
dc.date.available	2019-09-04T09:03:30Z	-
dc.date.issued	2019	-
dc.identifier.citation	Lunina, ML; Lunin, LS ; Sysoev, IA; Gusev, DA; Kazakova, AE. Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates // CRYSTALLOGRAPHY REPORTS. - 2019. - Том: 64. - Выпуск: 4. - Стр.: 649-655	ru
dc.identifier.uri	http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=7&SID=E471anh4cEh9AHVwVNL&page=1&doc=1	-
dc.identifier.uri	http://hdl.handle.net/20.500.12258/6920	-
dc.description.abstract	The possibility of growing arrays of InxGa1-xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1-xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1-xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1-xAs nanocrystals and films grown on GaAs are studied	ru
dc.language.iso	en	ru
dc.publisher	PLEIADES PUBLISHING INC	ru
dc.relation.ispartofseries	CRYSTALLOGRAPHY REPORTS	-
dc.subject	Optical-properties	ru
dc.subject	Heterostructures	ru
dc.title	Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates	ru
dc.type	Статья	ru
vkr.amount	Стр.: 649-655	ru
vkr.inst	Инженерный институт	-
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