Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates

Abstract

The possibility of growing arrays of InxGa1-xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1-xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1-xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1-xAs nanocrystals and films grown on GaAs are studied