Browsing by Author Санкин, А. В.

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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2019Calculation and analysis of the features temperature behavior of the electrical conductivity semiconductors GeTe and SnTe near structural phase transition TCSankin, A. V.; Санкин, А. В.; Altukhov, V. I.; Алтухов, В. И.; Mitjugova, O. A.; Митюгова, О. А.; Yanukyan, E. G.; Янукян, Э. Г.
2016Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbideAltukhov, V. I.; Алтухов, В. И.; Kasyanenko, I. S.; Касьяненко, И. С.; Sankin, A. V.; Санкин, А. В.
2015Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solutionAltukhov, V. I.; Алтухов, В. И.; Kasyanenko, I. S.; Касьяненко, И. С.; Sankin, A. V.; Санкин, А. В.
2016Modeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x)Altukhov, V. I.; Алтухов, В. И.; Bilalov, B. A.; Билалов, Б. А.; Sankin, A. V.; Санкин, А. В.; Filipova, S. V.; Филипова, С. В.
2021Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDsSankin, A. V.; Санкин, А. В.; Altukhov, V. I.; Алтухов, В. И.
2020Schotky barrier height and calculation of voltage–current characteristics of Al/n-(SiC)1–x(AlN)x diodes And 4H–SiC heterojunctionsAltukhov, V. I.; Алтухов, В. И.; Sankin, A. V.; Санкин, А. В.; Antonov, V. F.; Антонов, В. Ф.; Filipova, S. V.; Филипова, С. В.; Mitjugova, O. A.; Митюгова, О. А.
2018Schottky-Barrier model nonlinear in surface-state concentration and calculation of the I–V characteristics of diodes based on SiC and Its solid solutions in the composite charge-transport modelAltukhov, V. I.; Алтухов, В. И.; Sankin, A. V.; Санкин, А. В.; Sysoev, D. K.; Сысоев, Д. К.; Yanukyan, E. G.; Янукян, Э. Г.