Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/3689
Title: Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
Authors: Altukhov, V. I.
Алтухов, В. И.
Kasyanenko, I. S.
Касьяненко, И. С.
Sankin, A. V.
Санкин, А. В.
Keywords: Current voltage characteristics;Interface states;Semiconductor metal boundaries;Silicon carbide;Surface defects;Schottky barrier diodes
Issue Date: 2015
Publisher: Maik Nauka Publishing / Springer SBM
Citation: Safaraliev, G.K., Bilalov, B.A., Kurbanov, M.K., Altukhov, V.I., Kas’yanenko, I.S., Sankin, A.V. Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution // Russian Microelectronics. - 2015. - Volume 44. - Issue 6. - Pages 404-409
Series/Report no.: Russian Microelectronics
Abstract: A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy EF on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x(AlN)x structures. The theoretical results have been compared with the experimental data
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-84946115090&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=8&citeCnt=0&searchTerm=
http://hdl.handle.net/20.500.12258/3689
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