Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/123456789/31858
Title: Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads
Authors: Khorol’skii, V. Y.
Хорольский, В. Я.
Isupova, A. M.
Исупова, А. М.
Keywords: Power semiconductor devices;Nondestructive examination;Static and dynamic current overloads;Electronic equipment testing;Thermal stability;Current overloads
Issue Date: 2025
Publisher: Pleiades Publishing
Citation: Khorolsky, V. Y, Isupova, A. M., Yundin, K. M., Sharipov, I. K. Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads // Russian Electrical Engineering. - 2025. - 96 (5). - pp. 359 - 363. - DOI: 10.3103/S1068371225700464
Series/Report no.: Russian Electrical Engineering
Abstract: The justification of a system for diagnosing the technical condition of power semiconductor devices, based on the principles of nondestructive testing has been reviewed. An assessment of the current state of protection means for semiconductor products is given. The theoretical foundations forming the basis for the development of such systems are presented, along with the results of experimental studies on a prototype device.
URI: https://dspace.ncfu.ru/handle/123456789/31858
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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