Please use this identifier to cite or link to this item:
https://dspace.ncfu.ru/handle/123456789/31858| Title: | Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads |
| Authors: | Khorol’skii, V. Y. Хорольский, В. Я. Isupova, A. M. Исупова, А. М. |
| Keywords: | Power semiconductor devices;Nondestructive examination;Static and dynamic current overloads;Electronic equipment testing;Thermal stability;Current overloads |
| Issue Date: | 2025 |
| Publisher: | Pleiades Publishing |
| Citation: | Khorolsky, V. Y, Isupova, A. M., Yundin, K. M., Sharipov, I. K. Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads // Russian Electrical Engineering. - 2025. - 96 (5). - pp. 359 - 363. - DOI: 10.3103/S1068371225700464 |
| Series/Report no.: | Russian Electrical Engineering |
| Abstract: | The justification of a system for diagnosing the technical condition of power semiconductor devices, based on the principles of nondestructive testing has been reviewed. An assessment of the current state of protection means for semiconductor products is given. The theoretical foundations forming the basis for the development of such systems are presented, along with the results of experimental studies on a prototype device. |
| URI: | https://dspace.ncfu.ru/handle/123456789/31858 |
| Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| scopusresults 3664.pdf Restricted Access | 128.3 kB | Adobe PDF | View/Open |
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