Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/11217
Title: Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
Authors: Valyukhov, D. P.
Валюхов, Д. П.
Baklanov, I. S.
Бакланов, И. С.
Shtab, E. V.
Штаб, Э. В.
Shtab, A. V.
Штаб, А. В.
Pigulev, R. V.
Пигулев, Р. В.
Iliasov, A. S.
Ильясов, А. Ш.
Keywords: Semiconducting silicon compounds;Silver compounds;Research laboratories;Metals;Natural frequencies;Ohmic contacts;Quality control
Issue Date: 2019
Publisher: Institute of Physics Publishing
Citation: Valiukhov, D.P., Baklanov, I.S., Shtab, E.V., Shtab, A.V., Pigulev, R.V., Iliasov, A.S. Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology // Journal of Physics: Conference Series. - 2019. - Volume 1384. - Issue 1. - Номер статьи 012002
Series/Report no.: Journal of Physics: Conference Series
Abstract: The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. The limiting factor for resonance process is determined. It is found that the resonance frequency is a subject of semiconductor-metal junction parameters while metal layer thickness impact is minor
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm=
http://hdl.handle.net/20.500.12258/11217
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