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Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/11217
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dc.contributor.authorValyukhov, D. P.-
dc.contributor.authorВалюхов, Д. П.-
dc.contributor.authorBaklanov, I. S.-
dc.contributor.authorБакланов, И. С.-
dc.contributor.authorShtab, E. V.-
dc.contributor.authorШтаб, Э. В.-
dc.contributor.authorShtab, A. V.-
dc.contributor.authorШтаб, А. В.-
dc.contributor.authorPigulev, R. V.-
dc.contributor.authorПигулев, Р. В.-
dc.contributor.authorIliasov, A. S.-
dc.contributor.authorИльясов, А. Ш.-
dc.date.accessioned2020-01-30T08:53:13Z-
dc.date.available2020-01-30T08:53:13Z-
dc.date.issued2019-
dc.identifier.citationValiukhov, D.P., Baklanov, I.S., Shtab, E.V., Shtab, A.V., Pigulev, R.V., Iliasov, A.S. Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology // Journal of Physics: Conference Series. - 2019. - Volume 1384. - Issue 1. - Номер статьи 012002ru
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm=-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/11217-
dc.description.abstractThe article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. The limiting factor for resonance process is determined. It is found that the resonance frequency is a subject of semiconductor-metal junction parameters while metal layer thickness impact is minorru
dc.language.isoenru
dc.publisherInstitute of Physics Publishingru
dc.relation.ispartofseriesJournal of Physics: Conference Series-
dc.subjectSemiconducting silicon compoundsru
dc.subjectSilver compoundsru
dc.subjectResearch laboratoriesru
dc.subjectMetalsru
dc.subjectNatural frequenciesru
dc.subjectOhmic contactsru
dc.subjectQuality controlru
dc.titleResonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodologyru
dc.typeСтатьяru
vkr.instГуманитарный институтru
vkr.instИнженерный институтru
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