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Title: | Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology |
Authors: | Valyukhov, D. P. Валюхов, Д. П. Baklanov, I. S. Бакланов, И. С. Shtab, E. V. Штаб, Э. В. Shtab, A. V. Штаб, А. В. Pigulev, R. V. Пигулев, Р. В. Iliasov, A. S. Ильясов, А. Ш. |
Keywords: | Semiconducting silicon compounds;Silver compounds;Research laboratories;Metals;Natural frequencies;Ohmic contacts;Quality control |
Issue Date: | 2019 |
Publisher: | Institute of Physics Publishing |
Citation: | Valiukhov, D.P., Baklanov, I.S., Shtab, E.V., Shtab, A.V., Pigulev, R.V., Iliasov, A.S. Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology // Journal of Physics: Conference Series. - 2019. - Volume 1384. - Issue 1. - Номер статьи 012002 |
Series/Report no.: | Journal of Physics: Conference Series |
Abstract: | The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. The limiting factor for resonance process is determined. It is found that the resonance frequency is a subject of semiconductor-metal junction parameters while metal layer thickness impact is minor |
URI: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/11217 |
Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
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