Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/11480
Title: Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate
Authors: Devitsky, O. V.
Девицкий, О. В.
Sysoev, I. A.
Сысоев, И. А.
Kas'yanov, I. V.
Касьянов, И. В.
Nikulin, D. A.
Никулин, Д. А.
Keywords: Ion-beam deposition;Gallium nitride;Sapphire;Aluminum nitride;Wide-bandgap semiconductors
Issue Date: 2019
Publisher: MAIK NAUKA/INTERPERIODICA/SPRINGER
Citation: Lunin, LS; Devitskii, OV; Sysoev, IA; Pashchenko, AS; Kas'yanov, IV; Nikulin, DA; Irkha, VA. Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate // TECHNICAL PHYSICS LETTERS. - 2019. - Том: 45. - Выпуск: 12. - Стр.: 1237-1240
Series/Report no.: Technical Physics Letters
Abstract: Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire
URI: http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1
http://hdl.handle.net/20.500.12258/11480
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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