Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes

Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/14301

Title:	Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes
Authors:	Altukhov, V. I. Алтухов, В. И. Sysoev, D. K. Сысоев, Д. К.
Keywords:	Schottky diodes;Obtaining single crystals;Solid solutions;Single crystals of SiC
Issue Date:	2020
Publisher:	IOP Publishing Ltd
Citation:	Dadashev, R.H., Altukhov, V.I., Sankin, A.V., Sysoev, D.K., Elimkhanov, D.Z., Gudaev, M.-A.A., Uspazhiev, R.T. Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes // IOP Conference Series: Materials Science and Engineering. - 2020. - Volume 905. - Issue 1. - Номер статьи 012017
Series/Report no.:	IOP Conference Series: Materials Science and Engineering
Abstract:	The main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been developed, and the current-voltage characteristics of Schottky diodes have been obtained, their comparison with the I-V characteristics of silicon-based diodes has been made
URI:	http://hdl.handle.net/20.500.12258/14301
Appears in Collections:	Статьи, проиндексированные в SCOPUS, WOS

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