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Please use this identifier to cite or link to this item: https://dspace.ncfu.ru/handle/20.500.12258/5459
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dc.contributor.authorSokolenko, E. V.-
dc.contributor.authorСоколенко, Е. В.-
dc.contributor.authorSlyusarev, G. V.-
dc.contributor.authorСлюсарев, Г. В.-
dc.date.accessioned2019-05-27T10:08:11Z-
dc.date.available2019-05-27T10:08:11Z-
dc.date.issued2019-
dc.identifier.citationSokolenko, E.V., Slyusarev, G.V. Modeling of Structural Defects in Silicon Carbide // Inorganic Materials. - 2019. - Volume 55. - Issue 1. - Pages 19-31ru
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065572605&origin=resultslist&sort=plf-f&src=s&st1=Modeling+of+Structural+Defects+in+Silicon+Carbide&st2=&sid=2baddd47ab8d40ac26e088b8dca66c22&sot=b&sdt=b&sl=64&s=TITLE-ABS-KEY%28Modeling+of+Structural+Defects+in+Silicon+Carbide%29&relpos=0&citeCnt=0&searchTerm=-
dc.identifier.urihttp://hdl.handle.net/20.500.12258/5459-
dc.description.abstractThis paper reports DFT calculations of the electron density in pure and imperfect silicon carbide clusters. The local levels produced in the band gap by doping are shown to be determined predominantly by intrinsic states of the silicon and carbonru
dc.language.isoenru
dc.publisherPleiades Publishingru
dc.relation.ispartofseriesInorganic Materials-
dc.subjectElectron densityru
dc.subjectImpurity defectsru
dc.subjectLocal levelsru
dc.subjectNanoclustersru
dc.subjectVacanciesru
dc.subjectSilicon carbideru
dc.titleModeling of structural defects in silicon carbideru
dc.typeСтатьяru
vkr.amountPages 19-31ru
vkr.instИнститут нефти и газа-
vkr.instИнститут информационных технологий и телекоммуникаций-
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