Репозиторий научных и учебно-методических публикаций
Северо-Кавказский федеральный университет
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https://dspace.ncfu.ru/handle/20.500.12258/5459| Title: | Modeling of structural defects in silicon carbide |
| Authors: | Sokolenko, E. V. Соколенко, Е. В. Slyusarev, G. V. Слюсарев, Г. В. |
| Keywords: | Electron density;Impurity defects;Local levels;Nanoclusters;Vacancies;Silicon carbide |
| Issue Date: | 2019 |
| Publisher: | Pleiades Publishing |
| Citation: | Sokolenko, E.V., Slyusarev, G.V. Modeling of Structural Defects in Silicon Carbide // Inorganic Materials. - 2019. - Volume 55. - Issue 1. - Pages 19-31 |
| Series/Report no.: | Inorganic Materials |
| Abstract: | This paper reports DFT calculations of the electron density in pure and imperfect silicon carbide clusters. The local levels produced in the band gap by doping are shown to be determined predominantly by intrinsic states of the silicon and carbon |
| URI: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85065572605&origin=resultslist&sort=plf-f&src=s&st1=Modeling+of+Structural+Defects+in+Silicon+Carbide&st2=&sid=2baddd47ab8d40ac26e088b8dca66c22&sot=b&sdt=b&sl=64&s=TITLE-ABS-KEY%28Modeling+of+Structural+Defects+in+Silicon+Carbide%29&relpos=0&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/5459 |
| Appears in Collections: | Статьи, проиндексированные в SCOPUS, WOS |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| scopusresults 926 .pdf Restricted Access | 2.23 MB | Adobe PDF | View/Open | |
| WoS 589 .pdf Restricted Access | 74.74 kB | Adobe PDF | View/Open |
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