Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12258/6920
Title: Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates
Authors: Sysoev, I. A.
Сысоев, И. А.
Gusev, D. A.
Гусев, Д. А.
Keywords: Optical-properties;Heterostructures
Issue Date: 2019
Publisher: PLEIADES PUBLISHING INC
Citation: Lunina, ML; Lunin, LS ; Sysoev, IA; Gusev, DA; Kazakova, AE. Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates // CRYSTALLOGRAPHY REPORTS. - 2019. - Том: 64. - Выпуск: 4. - Стр.: 649-655
Series/Report no.: CRYSTALLOGRAPHY REPORTS
Abstract: The possibility of growing arrays of InxGa1-xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1-xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1-xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1-xAs nanocrystals and films grown on GaAs are studied
URI: http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=7&SID=E471anh4cEh9AHVwVNL&page=1&doc=1
http://hdl.handle.net/20.500.12258/6920
Appears in Collections:Статьи, проиндексированные в SCOPUS, WOS

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