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Browsing by Author Altukhov, V. I.

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Issue Date	Title	Author(s)
2019	Calculation and analysis of the features temperature behavior of the electrical conductivity semiconductors GeTe and SnTe near structural phase transition TC	Sankin, A. V.; Санкин, А. В.; Altukhov, V. I.; Алтухов, В. И.; Mitjugova, O. A.; Митюгова, О. А.; Yanukyan, E. G.; Янукян, Э. Г.
2016	Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide	Altukhov, V. I.; Алтухов, В. И.; Kasyanenko, I. S.; Касьяненко, И. С.; Sankin, A. V.; Санкин, А. В.
2015	Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution	Altukhov, V. I.; Алтухов, В. И.; Kasyanenko, I. S.; Касьяненко, И. С.; Sankin, A. V.; Санкин, А. В.
2021	Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition	Sankin, A. V.; Санкин, А. В.; Altukhov, V. I.; Алтухов, В. И.
2016	Modeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x)	Altukhov, V. I.; Алтухов, В. И.; Bilalov, B. A.; Билалов, Б. А.; Sankin, A. V.; Санкин, А. В.; Filipova, S. V.; Филипова, С. В.
2020	Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes	Altukhov, V. I.; Алтухов, В. И.; Sysoev, D. K.; Сысоев, Д. К.
2021	Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDs	Sankin, A. V.; Санкин, А. В.; Altukhov, V. I.; Алтухов, В. И.
2020	Schotky barrier height and calculation of voltage–current characteristics of Al/n-(SiC)1–x(AlN)x diodes And 4H–SiC heterojunctions	Altukhov, V. I.; Алтухов, В. И.; Sankin, A. V.; Санкин, А. В.; Antonov, V. F.; Антонов, В. Ф.; Filipova, S. V.; Филипова, С. В.; Mitjugova, O. A.; Митюгова, О. А.
2018	Schottky-Barrier model nonlinear in surface-state concentration and calculation of the I–V characteristics of diodes based on SiC and Its solid solutions in the composite charge-transport model	Altukhov, V. I.; Алтухов, В. И.; Sankin, A. V.; Санкин, А. В.; Sysoev, D. K.; Сысоев, Д. К.; Yanukyan, E. G.; Янукян, Э. Г.
2022	Thin SiС and gan-based films and structures: production and properties	Sankin, A. V.; Санкин, А. В.; Altukhov, V. I.; Алтухов, В. И.

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